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| Preliminary data SPI47N10L SPP47N10L,SPB47N10L SIPMOS Power-Transistor Feature N-Channel Enhancement mode Logic Level 175C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 26 47 P-TO220-3-1 V m A Type SPP47N10L SPB47N10L SPI47N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4177 Q67040-S4176 Q67060-S7432 Marking 47N10L 47N10L 47N10L Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value 47 33 Unit A Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg 188 400 17.5 6 20 175 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID =47 A , VDD =25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =47A, VDS =0V, di/dt=200A/s Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-09 Preliminary data SPI47N10L SPP47N10L,SPB47N10L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area F) Symbol min. RthJC RthJA RthJA - Values typ. max. 0.85 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 100 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current VDS =100V, VGS =0V, Tj =25C VDS =100V, VGS =0V, Tj =150C A 0.1 10 25 18 1 100 100 40 26 nA m Gate-source leakage current VGS =20V, VDS =0V Drain-source on-state resistance VGS =4.5V, ID=33A Drain-source on-state resistance VGS =10V, ID =33A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-09 Preliminary data SPI47N10L SPP47N10L,SPB47N10L Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics ID =33A Symbol Conditions min. Values typ. 36 2000 375 210 50 100 50 70 max. 2500 470 265 75 150 75 105 Unit Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS=25V, f=1MHz VDD =50V, VGS =4.5V, ID =47A, RG =2 Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =80V, ID =47A, VGS =0 to 10V VDD =80V, ID =47A V(plateau) VDD =80V, ID=47A Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =94A VR =50V, IF =lS , diF /dt=100A/s IS ISM TC=25C Page 3 Transconductance gfs VDS 2*ID*RDS(on)max , 18 - S pF ns - 8 16 90 3.38 12 24 135 - nC V - 1.1 80 340 47 188 1.5 120 510 A V ns nC 2002-01-09 Preliminary data SPI47N10L SPP47N10L,SPB47N10L 1 Power dissipation Ptot = f (TC ) 190 SPP47N10L 2 Drain current ID = f (TC ) parameter: VGS 10 V 55 SPP47N10L W 160 140 A 45 40 Ptot ID 120 100 80 35 30 25 20 60 15 40 20 0 0 10 5 20 40 60 80 100 120 140 160 C 190 0 0 20 40 60 80 100 120 140 160 C 190 TC 3 Safe operating area ID = f ( VDS ) 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = 0 , TC = 25 C 10 3 SPP47N10L parameter : D = tp /T 10 1 SPP47N10L K/W A tp = 7.1s 10 s 10 0 10 2 Z thJC ID 10 -1 =V DS /I D 100 s 10 R 1 DS (on 10 -2 ) 1 ms 10 -3 single pulse 10 -4 -7 10 10 ms DC 10 0 -1 10 10 0 10 1 10 2 V 10 3 10 -6 VDS Page 4 TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2002-01-09 Preliminary data SPI47N10L SPP47N10L,SPB47N10L 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s 120 SPP47N10L 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 130 SPP47N10L Ptot = 175W VGS [V] a 2.5 b 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 A 100 90 80 e l kj i h g m 110 100 b c d e f c d e RDS(on) 90 80 70 60 50 40 30 f g hi j lk d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 6.5 j 7.0 k l 8.0 10.0 ID 70 60 50 c d f g h i j k l 40 30 20 10 a b 20 10 VGS [V] = b 3.0 c 3.5 0 0 1 2 3 4 V 5.5 0 0 10 20 30 40 50 60 70 80 A 100 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 60 A 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 60 S 50 45 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V g fs 40 ID 50 45 40 35 30 25 20 15 10 5 5 0 0 10 20 30 40 A 55 VGS ID Page 5 2002-01-09 Preliminary data SPI47N10L SPP47N10L,SPB47N10L 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 33 A, VGS = 4.5 V 170 SPP47N10L 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 2 mA 3 V m 140 2.4 RDS(on) 120 V GS(th) 2.2 2 1.8 1.6 100 80 1.4 1.2 max 60 98% 40 typ 20 1 0.8 0.6 0.4 0.2 min typ 0 -60 -20 20 60 100 140 C 200 0 -60 -20 20 60 100 140 C 200 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 SPP47N10L A pF C 10 3 IF 10 1 Ciss 10 2 Coss Crss 10 2 0 10 0 0 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2002-01-09 Preliminary data SPI47N10L SPP47N10L,SPB47N10L 13 Typ. avalanche energy EAS = f (Tj ) 400 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 47 A pulsed 16 SPP47N10L mJ 320 E AS VGS 280 240 200 160 120 80 40 0 25 2 45 65 85 105 125 145 C 185 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP47N10L 120 V V (BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 C Tj Page 7 200 par.: ID = 47 A , VDD = 25 V, RGS = 25 V 12 10 0,2 VDS max 0,8 VDS max 8 6 4 0 0 20 40 60 80 100 120 nC 150 QGate 2002-01-09 Preliminary data SPI47N10L SPP47N10L,SPB47N10L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP47N10L, BSPB47N10L and BSPI47N10L, for simplicity the device is referred to by the term SPP47N10L, SPB47N10L and SPI47N10L throughout this documentation Page 8 2002-01-09 |
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